data sheet no. pd-6.077 IR03H420 high voltage half-bridge features n output power mosfets in half-bridge configuration n 500v rated breakdown voltage n high side gate drive designed for bootstrap operation n matched propagation delay for both channels n independent high and low side output channels n undervoltage lockout n 5v schmitt-triggered input logic n half-bridge output in phase with hin n cross conduction prevention logic n internally set dead time description the IR03H420 is a high voltage, high speed half bridge. proprietary hvic and latch immune cmos technologies, along with the hexfet ? power mosfet technology, enable ruggedized single package construction. the logic inputs are compatible with standard cmos or lsttl outputs. the front end features an independent high and low side driver in phase with the logic compatible input signals. the output features two hexfets in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half- bridge. propagation delays for the high and low side power mosfets are matched to simplify use. the device can operate up to 500 volts. product summary v in (max) 500v t on/off 130 ns t rr 270 ns r ds ( on ) 3.0 w w p d (t a = 25 oc ) 2.0w package IR03H420 9506 typical connection to lo ad ir03h 420 com cc v v in b v u p to 500v d c b us vo com v in 1 2 3 4 6 9 7 cc v h in h in l in l in www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
IR03H420 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. parameter s y mbol definition min. max. units v in hi g h volta g e suppl y -0.3 500 v b hi g h side floatin g suppl y absolute volta g e -0.3 525 vo half-brid g e output volta g e -0.3 v in + 0.3 v v ih /v il lo g ic input volta g e ( hin & lin ) -0.3 v cc + 0.3 v cc low side and lo g ic fixed suppl y volta g e -0.3 25 dv/dt peak diode recover y dv/dt --- 3.5 v/ns p d packa g e power dissipation @ t a +25oc --- 2.00 w r q ja thermal resistance , junction to ambient --- 60 oc/w t j junction temperature -55 150 t s stora g e temperature -55 150 oc t l lead temperature ( solderin g, 10 seconds ) --- 300 recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. parameter s y mbol definition min. max. units v b hi g h side floatin g suppl y absolute volta g e vo + 10 vo + 20 v in hi g h volta g e suppl y --- 500 v vo half-brid g e output volta g e ( note 1 ) 500 v cc low side and lo g ic fixed suppl y volta g e1020 v ih /v il lo g ic input volta g e ( hin & lin ) 0v cc i d continuous drain current ( t a = 25oc ) --- 0.7 a ( t a = 85oc ) --- 0.5 t a ambient temperature -40 125 oc note 1: logic operational for vo of -5 to 500 v. logic state held for vo of -5 to - v b . www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
IR03H420 dynamic electrical characteristics v bias (v cc , v b ) = 15v and t a = 25 oc unless otherwise specified. switching time waveform definitions are shown in figure 2. parameter t a = 25oc symbol definition min. typ. max. units test conditions t on turn-on propa g ation dela y ( see note 2 ) --- 600 720 v s = 0 v t off turn-off propa g ation dela y ( see note 2 ) --- 90 200 v s = 500 v t r turn-on rise time ( see note 2 ) --- 80 120 ns t f turn-off fall time ( see note 2 ) --- 40 70 mt dela y matchin g, hs & ls turn-on/off --- 30 --- dt deadtime , ls turn-off to hs turn-on & hs turn-on to ls turn-off --- 500 750 t rr reverse recover y time ( mosfet bod y diode ) --- 260 --- i f = 0.7 a q rr reverse recover y char g e ( mosfet bod y diode ) --- 0.7 --- c di/dt = 100a/ s note 2: switching times as specified and illustrated in figure 2 are referenced to the mosfet gate input voltage. this is shown as ho in figure 2. static electrical characteristics v bias (v cc , v b ) = 15v and t a = 25 oc unless otherwise specified. the input voltage and current levels are referenced to com. parameter t a = 25oc symbol definition min. typ. max. units test conditions su pp l y characteristics v ccuv + v cc suppl y undervolta g e positive goin g threshold 8.8 9.3 9.8 v v ccuv - v cc suppl y undervolta g e ne g ative goin g threshold 7.5 8.2 8.6 i q cc quiescent v cc suppl y current --- 140 240 i q bs quiescent v bs suppl y current --- 20 50 a i os offset suppl y leaka g e current --- --- 50 v b = v s = 500v in p ut characteristics v ih lo g ic 1 input volta g e 2.7 --- --- v v cc = 10v to 20v v il lo g ic 0 input volta g e --- --- 0.8 i in+ lo g ic 1 input bias current --- 20 40 a i in- lo g ic 0 input bias current --- --- 1.0 a out p ut characteristics r ds ( on ) static drain-to-source on-resistance --- 3.0 --- w i d = 700ma v sd diode forward volta g e --- 0.8 --- v t j = 150 oc www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
IR03H420 functional block diagram ir2103 vo com v b v cc vin irfc420 irfc420 1 2 3 4 6 9 7 hin ___ lin lead definitions lead s y mbol description v cc lo g ic and internal g ate drive suppl y volta g e. hin lo g ic input for hi g h side half brid g e output , in phase lin lo g ic input for low side half brid g e output , out of phase v b hi g h side g ate drive floatin g suppl y . for bootstrap operation a hi g h volta g e fast recover y diode is needed to feed from v cc to v b . v in hi g h volta g e suppl y . vo half-brid g e output. com lo g ic and low side of half-brid g e return. lead assignments v cc v0 v in hin lin com v b 9 7 6 4 3 2 1 9 lead sip w/o leads 5 & 8 IR03H420 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
IR03H420 hin vo ___ lin v+ 0 hin t r t on t f t off ho 50% 50% 90% 90% 10% 10% vo figure 1. input/output timing diagram figure 2. switching time waveform definitions _ __ lin hin ho 50% 50% 10% lo 90% mt ho lo mt figure 3. delay matching waveform definitions figure 4. deadtime waveform definitions hin lin ho lo 50% 50% 10% 90% 90% 10% dt www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
IR03H420 package outline world headquarters: 233 kansas st., el segundo, ca 90245 usa ? (310)322-3331 ? fax (310)322-3332 ? telex 472-0403 european headquarters: hurst green, oxted, surrey rh8 9bb, uk ? (44)0883 713215 ? fax (944)0883 714234 ? telex 95219 sales offices, agents and distributors in major cities throughout the world. data and specifications subject to change without n otice. ? 1996 international rectifier printed in u.s.a. 3-96 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
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